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Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation: Difference between revisions

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Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
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Content and illustration by Thomas Pedersen @ DTU Nanolab unless otherwise noted.
Content and illustration by Thomas Pedersen @ DTU Nanolab unless otherwise noted.


= Rough estimation of exposure time =
=Pattern preparation for exposure on JEOL 9500 =
Prior to exposure a pattern must be prepared for exposure. The original pattern must be provided in GDS format. Depending on requirements and complexity level pattern preparation will involve all or subset of the following steps.
 
*Exposure time estimation
*Placement preparation
*Alignment preparation
*Bulk and sleeve separation
*Proximity Effect Correction
*Export to V30
 
Some steps are done using Beamer from GenISys GmbH. We advise all users to familiarise themselves with Beamer [https://www.genisys-gmbh.com/webinar-series-beamer-training.html through the tutorial series found on GenISys own website.] or from our own [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER|Beamer guide.]]
 
=Exposure time estimation=
The writing time should always be estimated prior to an exposure session. The writing time ''t'' [s] is a function of exposure dose ''Q'' [C/cm<sup>2</sup>], pattern area ''A'' [m<sup>2</sup>] and beam current ''I'' [A], as given below:
The writing time should always be estimated prior to an exposure session. The writing time ''t'' [s] is a function of exposure dose ''Q'' [C/cm<sup>2</sup>], pattern area ''A'' [m<sup>2</sup>] and beam current ''I'' [A], as given below:


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The area of your pattern can easily be found in L-edit by selecting all of your structure and use the area calculator in Tools/Add-Ins. If your pattern contains instances, you have to flatten your pattern (Cell/Flatten) before you use the area calculator; notice, however, that the flattening cannot be undone.
The area of your pattern can easily be found in L-edit by selecting all of your structure and use the area calculator in Tools/Add-Ins. If your pattern contains instances, you have to flatten your pattern (Cell/Flatten) before you use the area calculator; notice, however, that the flattening cannot be undone.


 
<br>
{| cellpadding="2" style="border: 2px solid darkgray;"
! width="500" |
|- border="0"
|[[File:currentbeamsize.jpg|400px]]
|- align="center"
|Beam diameter versus Beam current: The machine have three operating objective apertures (no. 15 on above illustration of the column) in order to obtain different beam diameters in different current ranges. The available apertures are called 'aperture 5' (60 µm), 'aperture 6' (100 µm) and 'aperture 7' (200 µm).
|}
 
 
 
<br clear="all" />
 
 
=Pattern preparation for exposure on JEOL 9500 =
Prior to exposure a pattern must be prepared for exposure. The original pattern must be provided in GDS format. Depending on requirements and complexity level pattern preparation will involve all or subset of the following steps.
 
*Placement preparation
*Alignment preparation
*Bulk and sleeve separation
*Proximity Effect Correction
*Export to V30
 
Some steps are done using Beamer from GenISys GmbH. We advise all users to familiarise themselves with Beamer [https://www.genisys-gmbh.com/webinar-series-beamer-training.html through the tutorial series found on GenISys own website.] or from our own [[Specific_Process_Knowledge/Lithography/EBeamLithography/BEAMER|Beamer guide.]]


== Placement preparation ==  
== Placement preparation ==  
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