Specific Process Knowledge/Lithography/EBeamLithography/JEOL 9500 User Guide: Difference between revisions
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The system can be characterized as follows: | The system can be characterized as follows: | ||
*The spot beam for electron beam writing is generated by a ZrO/W emitter and a four-stage electron beam focusing lens system | *The spot beam for electron beam writing is generated by a ZrO/W emitter and a four-stage electron beam focusing lens system. | ||
* | *The maximum frequency of the deflector scanner is 100 MHz, i.e. the minimum beam dwell time is 10 ns. | ||
*The acceleration voltage is 100 kV. | *The acceleration voltage is locked at 100 kV. | ||
*The e-beam writer can pattern structures with a minimum resolution of | *The e-beam writer can pattern structures with a minimum resolution of 10 nm. | ||
*The maximum field | *The maximum writing field size is 1000 µm x 1000 µm. | ||
*The machine has cassettes that can contain either 6 wafers of 2” in size, 2 or 3 wafers of 4” in size, 1 wafer of 6” in size, 1 wafer of 8” in size, 4 chips of different sizes(slot sizes 4 mm, 8 mm, 12 mm, and 20 mm) | *The machine has cassettes that can contain either 6 wafers of 2” in size, 2 or 3 wafers of 4” in size, 1 wafer of 6” in size, 1 wafer of 8” in size, 4 chips of different sizes(slot sizes 4 mm, 8 mm, 12 mm, and 20 mm). See the [[Specific Process Knowledge/Lithography/EBeamLithography/Cassettes|Cassette specification page for more information]] | ||
<br> | <br> | ||
== Rough estimation of exposure time == | == Rough estimation of exposure time == | ||