Specific Process Knowledge/Lithography/EBeamLithography/JEOLJobPreparation: Difference between revisions
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The shot time can be calculated as t = D·p<sup>2</sup>/I, where D is the dose in µC/cm<sup>2</sup> and I is current. As a practical example let us consider an exposure at 2 nA beam current and a desired dose of 250 µC/cm<sup>2</sup>. At 4 nm beam pitch the shot time will come out to 20 ns, while at 2 nm beam pitch it will come out at 5 ns and thus violate the hardware limitation of 10 ns. If one would insist on 2 nm beam pitch in that case one would have to choose a lower beam current at the expense of longer writing time. | The shot time can be calculated as ''t = D·p<sup>2</sup>/I'', where ''D'' is the dose in µC/cm<sup>2</sup>, ''p'' is beam pitch and ''I'' is current. As a practical example let us consider an exposure at 2 nA beam current and a desired dose of 250 µC/cm<sup>2</sup>. At 4 nm beam pitch the shot time will come out to 20 ns, while at 2 nm beam pitch it will come out at 5 ns and thus violate the hardware limitation of 10 ns. If one would insist on 2 nm beam pitch in that case one would have to choose a lower beam current at the expense of longer writing time. | ||