Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions

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 Development of EBL resist can be done in two ways, either in beakers or on the automatic E-beam developer tool. The latter is equipped with ZED N50 for development of ZEP resist and AR 600-546 for development of CSAR. The system can handle chips or wafers up to 6”. It has predefined develop cycle times of 15, 30, 60 and 120 seconds. For other developers users have to use the EBL development fumehood in E4 and manually develop their substrates in beakers of appropriate size. Please observe there are beakers dedicated solvent developers such as isopropanol and other beakers dedicated alkaline developers.
-==Result==
+Initially the result can be verified in an optical microscope as shown below. Notice how only 9 out of the 10 instances are visible. The instance with the lowest dose is missing since it was written with insufficient dose for the resist used. Actual pattern confirmation for EBL patterns will naturally usually require use of a SEM.
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+Result of the tutorial job after development. Image: Thomas Pedersen.
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