Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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=== Nanoholes === | === Nanoholes === | ||
The nanoholes are 200nm wide, with 400nm pitch with 100 nm Al<sub>2</sub>O<sub>3</sub> mask. During the recipe, Pegasus 2 conditions were: Outer EM=10A, T=20°C, no clamping, no He BGC and all heaters OFF. | The nanoholes are 200nm wide, with 400nm pitch with 100 nm Al<sub>2</sub>O<sub>3</sub> mask. During the recipe, Pegasus 2 conditions were: Outer EM=10A, T=20°C, no clamping, no He BGC and all heaters OFF. The removal power was varied, and the achieved ER were 35.3 nm/min, 47.3 nm/min, 48.5 nm/min and 45.8 nm/min. | ||
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[[File:nH R-power.png|500px|left|thumb|'''''Nanoholes profile when varying the removal power.<br> | [[File:nH R-power.png|500px|left|thumb|'''''Nanoholes profile when varying the removal power. <br> | ||
Photo: Maria Farinha @DTU Nanolab, April 2022''''']] | Photo: Maria Farinha @DTU Nanolab, April 2022''''']] | ||
{| border="1" style="text-align: center; width: 650px; height: 200px" | {| border="1" style="text-align: center; width: 650px; height: 200px" | ||