Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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=== Isotropic etch === | === Isotropic etch === | ||
Some isotropic etches were performed, intercalated with anisotropic etches. The nanoholes are 200nm wide, with 400nm pitch with 100 nm Al<sub>2</sub>O<sub>3</sub> mask. The recipe presented in the table was repeated | Some isotropic etches were performed, intercalated with anisotropic etches. The nanoholes are 200nm wide, with 400nm pitch with 100 nm Al<sub>2</sub>O<sub>3</sub> mask. The recipe presented in the table was repeated 2 or 3 times to achieve the picture results. During the recipe, Pegasus 2 conditions were: Outer EM=10A, T=20°C, no clamping, no He BGC and all heaters OFF. Trying to oxide the sample before doing the isotropic etch can help to protect the top part, maintaining a more straight profile. However, after trying to do an oxidation step on Pegasus 2, with 3% valve control. 200 sccm O<sub>2</sub> and 2000W of coil power, the oxide layer was only 3.2 nm. | ||
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