Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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# 200 nm width nanoholes with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV). | # 200 nm width nanoholes with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV). | ||
The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer (recipe named "barc gentle etch", ER=5.42nm/min), and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe, which has an ER = 0.45 nm/min. With the pillars and holes samples, the BARC was also etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. <br> | The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer (recipe named ''"barc gentle etch"'', ER=5.42nm/min), and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe, which has an ER = 0.45 nm/min. With the pillars and holes samples, the BARC was also etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. <br> | ||
For the nanoholes, the Al<sub>2</sub>O<sub>3</sub> layer was etched for 260 minutes on the III-V ICP. The next thing would be to etch the BARC layer on Pegasus 2, however, it was seen that after the III-V ICP process, the leftover resist on the sample was removed during the CORE process on Pegasus 2, having no need to do the dedicated barc gentle etch recipe. | For the nanoholes, the Al<sub>2</sub>O<sub>3</sub> layer was etched for 260 minutes on the III-V ICP. The next thing would be to etch the BARC layer on Pegasus 2, however, it was seen that after the III-V ICP process, the leftover resist on the sample was removed during the CORE process on Pegasus 2, having no need to do the dedicated ''"barc gentle etch"'' recipe. | ||
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