Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions

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 In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development:
-# Pillars of 1 µm with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV).
+# 1 µm width pillars with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV).
-# Holes of 1 µm with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV).
+# 1 µm width holes with 1 µm pitch (50 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV).
-# Nanoholes of 200 nm with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV).
+# 200 nm width nanoholes with 400 nm pitch (100 nm Al<sub>2</sub>O<sub>3</sub> + 65 nm BARC + 750 nm DUV).
 The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer, and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe, which has an ER = 0.45 nm/min. With pillars and holes, the BARC was etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. The nanoholes had two different approaches, starting with 260 minutes on the III-V ICP. However, it was seen that after the III-V ICP process, the leftover resist on the sample was removed during the CORE process on Pegasus 2.