Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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==Wet SiO2 growth == | ==Wet SiO2 growth == | ||
[https://labmanager.dtu.dk/view_binary.php?class=ChemicalProcess&id=118&name=Updated_APV_Wet_SiO2-growth_using_HNO3+%281%29.docx '''Link to riskassessment and procedure in Labmanager (password needed)'''] | [https://labmanager.dtu.dk/view_binary.php?class=ChemicalProcess&id=118&name=Updated_APV_Wet_SiO2-growth_using_HNO3+%281%29.docx '''Link to riskassessment and procedure in Labmanager (password needed)'''] | ||
Wet SiO2 growth using hot HNO3. | |||
Done in fume hood 1 or 2 in D-3. Growth rate is 1,5 - 2 nm on 10 min | |||
'''Training and risk assessment always needed''' | |||
==Comparison of the methods for deposition of Silicon Oxide== | ==Comparison of the methods for deposition of Silicon Oxide== | ||