Specific Process Knowledge/Thin film deposition/Deposition of Silicon Oxide: Difference between revisions
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![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ![[Specific Process Knowledge/Thin film deposition/Lesker|Sputter System Lesker]] | ||
![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]] | ![[Specific Process Knowledge/Thin film deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system|Sputter-system Metal-Oxide(PC1)]] | ||
!Wet deposition of SiO2 | |||
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|Plasma Enhanced Chemical Vapor Deposition has the advantage that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature | |Plasma Enhanced Chemical Vapor Deposition has the advantage that a silicon oxide and be deposited with a quit high deposition rate at a rather low temperature | ||
|Sputter deposition: can be done on top of a large range of materials | |Sputter deposition: can be done on top of a large range of materials | ||
|Sputter deposition: can be done on top of a large range of materials. | |Sputter deposition: can be done on top of a large range of materials. | ||
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*Slightly O-poor as deposited non-reactively (O:Si=64:36), may be tunable if reactively sputtered with O<sub>2</sub> (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|here]]) | *Slightly O-poor as deposited non-reactively (O:Si=64:36), may be tunable if reactively sputtered with O<sub>2</sub> (see acceptance test results [[Specific_Process_Knowledge/Thin_film_deposition/Cluster-based_multi-chamber_high_vacuum_sputtering_deposition_system#Process_information|here]]) | ||
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* Thin layers (up to 200-300 nm) | * Thin layers (up to 200-300 nm) | ||
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*Room temp to 600 °C | *Room temp to 600 °C | ||
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*Medium. Perhaps use of HIPIMS can improve step coverage (requires significant process development) | *Medium. Perhaps use of HIPIMS can improve step coverage (requires significant process development) | ||
*Deposition on one side of the substrate | *Deposition on one side of the substrate | ||
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*Many smaller pieces or | *Many smaller pieces or | ||
*up to 10x 4" or 6" wafer | *up to 10x 4" or 6" wafer | ||
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*Almost any that will not degas and is not very poisonous | *Almost any that will not degas and is not very poisonous | ||
*See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet] | *See [http://labmanager.dtu.dk/function.php?module=XcMachineaction&view=edit&MachID=441 cross-contamination sheet] | ||
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