Specific Process Knowledge/Lithography/EBeamLithography/FirstEBL: Difference between revisions
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==Resist coating== | ==Resist coating== | ||
DTU Nanolab offers a few different standard resist as given in the table below. Typically layers of 50-500 nm are applied. The Gamma UV & E-beam coater has predefined recipes for various thickness of CSAR resist. For other thickness or other resist the more manual Lab Spin 2 or 3 coasters can be used. If using the Lab Spin coaters please refer to the table below for information on thickness versus spin speed and soft bake conditions. | DTU Nanolab offers a few different standard resist as given in the table below. Typically layers of 50-500 nm are applied. The Gamma UV & E-beam coater has predefined recipes for various thickness of CSAR resist. For other thickness or other resist the more manual Lab Spin 2 or 3 coasters can be used. If using the Lab Spin coaters please refer to the table below for information on thickness versus spin speed and soft bake conditions. | ||
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Resist thickness as function of spin speed on Lab Spin 2/3 can be estimated from the parameters above as y = ax<sup>b</sup>, where y is resist thickness in nm and x is spin speed in RPM. | |||
For our example process we will use a standard 4” silicon wafer and coat it with 180 nm CSAR on the fully automatic Gamma E-beam & UV coater using recipe 4318. | |||
=Pattern preparation= | =Pattern preparation= | ||