Specific Process Knowledge/Wafer cleaning/cleaning with HF: Difference between revisions
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Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details. | Removal of native oxide is a part of the RCA cleaning procedure. See the [[Specific Process Knowledge/Wafer cleaning/RCA|RCA]] page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the [[Specific Process Knowledge/Etch/Wet Silicon Oxide Etch (BHF)|oxide etch]] page for more details. | ||
Revision as of 16:15, 6 February 2023
Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.
All links to Kemibrug (SDS) and Labmanager Including APV and QC requires login.
Feedback to this page: click here
Removal of native oxide is a part of the RCA cleaning procedure. See the RCA page for further details. The HF/BHF baths in the RCA bench bath must only be used during the RCA cleaning procedure. For removal of oxide of processed wafers that is not getting a full RCA clean the other HF/BHF baths can be used. Please see the oxide etch page for more details.