Specific Process Knowledge/Etch/ICP Metal Etcher/silicon oxide: Difference between revisions
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=SiO2 etching in the ICP metal= | =SiO2 etching in the ICP metal= | ||
It is possible to etch SiO2 in the ICP metal etcher but it is not designed for it and | It is possible to etch SiO2 in the ICP metal etcher but it is not designed for it and we prefer that you do it elsewhere. It is a challenge to get a good selectivity to resist (typically in the range of 1:1 or worse) and it is probably not possible to get a profile angle of 90 degrees. More likely about 75-85 degrees. Different chemistries can be applied either based on CF4 or C4F8. If seems that C4F8 can give the best selectivity to resist (best case I have seem was 1:11 but it depends a lot on the process parameters)). If low coil power is needed CF4 chemistry is used because C4F8 needs a higher power to generate a plasma. ''/bghe 2016-04-25 '' | ||
==Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess == | ==Slow etch of SiO2 with resist as masking material - using a 6" carrier wafer with recess == | ||