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Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions

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Indiogo (talk | contribs)
NLAB-Employees-701, NLAB-LabmanagerAllUsers
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Indiogo (talk | contribs)
NLAB-Employees-701, NLAB-LabmanagerAllUsers
462 edits
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|style="background:LightGrey; color:black"|
|style="background:LightGrey; color:black"|
* 0% - 100%
* 0% - 100%
|style="background:WhiteSmoke; color:black;" align="left"|The maximum temperature allowed is '''dependent''' on both '''processing type''' and '''time'''.
|style="background:WhiteSmoke; color:black;" align="left"| High powers only allowed for few-seconds sequences.
|-
|-
!style="background:silver; color:black" align="center" align="center" rowspan="4"|Process gas
!style="background:silver; color:black" align="center" align="center" rowspan="4"|Process gas
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*Chips on carrier
*Chips on carrier
*100 mm or 150 mm wafers
*100 mm or 150 mm wafers
|style="background:WhiteSmoke; color:black;" align="left"| '''Small samples''' must be '''placed''' on '''dedicated carrier wafers'''. These '''do not need''' to be bonded to the carrier wafers.
|style="background:WhiteSmoke; color:black;" align="left"| '''Small samples''' must be '''placed''' on '''dedicated carrier wafers'''. These '''do not need''' to be bonded to the carriers.
|-
|-
| style="background:Silver; color:black"|Allowed materials
| style="background:Silver; color:black"|Allowed materials
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