Specific Process Knowledge/Bonding/Wafer Bonder 02: Difference between revisions

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[[Image:wafer bonder2.jpg|300x300px|thumb|Wafer Bonder 02: Positioned in cleanroom E-4]]
[[Image:wafer bonder2.jpg|300x300px|thumb|Wafer Bonder 02: Positioned in cleanroom E-4]]

Revision as of 07:23, 6 February 2023

Feedback to this page: click here Unless anything else is stated, everything on this page, text and pictures are made by DTU Nanolab.

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Wafer Bonder 02: Positioned in cleanroom E-4

The Wafer bonder 02 is a system for bonding. 3 different types of bonding can be done: Anodic, Eutectic and Fusion. Furthermore it is possible to align the wafers one wishes to bond. It is also possible to process and align pieces.

The user manual, quality control procedure and results, user APV(s), and contact information can be found in LabManager: Equipment info in LabManager



Process information

Types of Bonding

Overview of the performance of the Wafer Bonder 02 and some process related parameters

Purpose Bonding
  • Eutectic bonding
  • Fusion bonding
  • Anodic bonding
Performance Alignment accuracy
  • ± 2 microns for IR alignment
  • ± 5 microns for backside alignment
Process parameter range Process Temperature
  • Room temperature to 500C
Process pressure
  • ~510-4mbar - 1000mbar
Piston Force
  • Depending on the area, for 4" wafers 200-6000 mbar.
Substrates Batch size
  • One wafer per run
  • Pieces
Substrate material allowed
  • Silicon wafers
  • Quartz wafers
  • Pyrex wafers
Material allowed on the substrate
  • Silicon oxide
  • Silicon (oxy)nitride
  • Poly Silicon
  • Metals: Au, Sn, Ag, Al, Ti