Specific Process Knowledge/Lithography/DUVStepperLithography/DUVStepper: Difference between revisions

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Created page with "==DUV Stepper== 300x300px|right|thumb|DUV Stepper is placed in F-3 '''Feedback to this section''': '''[mailto:labadviser@anolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php?title=Specific_Process_Knowledge/Lithography/DUVStepperLithography#DUV_Stepper_FPA-3000EX4_from_Canon click here]''' The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and..."
 
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===Process information===
===Process information===
*[[/Optimization and Simulation|Optimization and Simulation]]
*[[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Optimization and Simulation|Optimization and Simulation]]
*[[/Reticle Design|Reticle Design]]
*[[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Reticle Design|Reticle Design]]
*[[/Process Instructions|Process Instructions]]
*[[Specific_Process_Knowledge/Lithography/DUVStepperLithography/Process Instructions|Process Instructions]]


===Equipment performance and process related parameters===
===Equipment performance and process related parameters===

Revision as of 13:33, 3 February 2023

DUV Stepper

DUV Stepper is placed in F-3

Feedback to this section: click here

The deep-UV stepper FPA-3000EX4 from Canon is an advanced exposure system designed for mass-production of 6 and 8 inch wafers/ devices having a throughput of up to 90 wafers per hour. The largest applicable thickness of the wafers/ devices is 1,2 mm. Also 4" wafers/ devices can be processed with some restrictions concerning throughput, resolution, uniformity and maximum allowed wafer thickness. The system is equipped with a KrF Excimer laser from Cymer (wavelength 248 nm). Its projection lens’ NA is variable over a range between 0,4 and 0,6. Additionally, the partial coherence factor (σ) of the illumination system can be adjusted and different off-axis illumination modes can be selected.

The critical dimension (CD) of patterns that can be realized is specified at around 250nm for arbitrary formed patterns in the standard illumination mode (NA=0,6; σ =0,65). However, the best achievable resolution is different for each pattern type, pattern shape and pitch. So linewidths down to 160 nm could be achieved for geometrically simple patterns or pattern arrays (single and multiple line or pin-hole structures).


The user manual(s), quality control procedure(s) and results and contact information can be found in LabManager: Equipment info in LabManager

Process information

Equipment performance and process related parameters

Purpose

Exposure system designed for mass/production of devices with linewidth down to 250nm

Specifications Magnification

1:5

Projection lens Numerical Aperture

0,4 - 0,60

Illumination system's σ

0,2 - 0,75 (standard illumination mode: σ = 0,65)

Exposure source

KrF laser

Wavelength

248nm

Illumination intensity

2800 W/m2

Illumination uniformity

1,2%

Maximum printed field size

22 x 26 mm (maximum on wafer)

Alignment accuracy

3 sigma = 50 nm

Substrates Substrate size
  • 100 mm wafers (in trays)
  • 150 mm wafers
  • 200 mm wafers (requires tool change)
Allowed materials
  • Any standard cleanroom material
Batch

1 - 25