Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

Revision as of 11:58, 29 November 2010

Noble Furnace

This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius. The Noble Furnace is located in service room 3.

Overview of the performance of the Noble Furnace

Purpose	Oxide growth, annealing
Performance
Process parameter range	Process Temperature	20-1000 ^oC
	Process pressure	1 atm
	Gasses on the system
Substrates	Batch size	1-25 4" wafer (or 2" wafers) per run
Substrates	Substrate material allowed	Silicon wafers (new from the box or RCA cleaned)

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-* 25 4" wafers can be processed simultaneously
+*
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 |style="background:LightGrey; color:black"|Batch size
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-*1-30 4" wafer (or 2" wafers) per run
+*1-25 4" wafer (or 2" wafers) per run
 |-
 | style="background:LightGrey; color:black"|Substrate material allowed