Specific Process Knowledge/Lithography/Strip: Difference between revisions

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 = Plasma Ashing =
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-A typical process time for stripping of 1.5 µm AZ5214e resist is 15-25 min and for stripping of 9.5 µm AZ4562 resist is 20-35 min with the process parameters: 210 ml O<math>_2</math>/min or mixture of 210 ml O<math>_2</math>/min and 70 ml N<math>_2</math>/min, power 1000 W.
-A Descum process in manual mode: O2: 70 sccm, N2: 70 sccm, power: 150 W, time: 10 min. Be sure to wait for cooling if the machine has been used at 1000W right before.
+Typical process time for stripping in plasma asher 1 or 2:
-At a load at 2 Fused silica wafers resist removed 0.01-01,5 um
+*1.5 µm AZ 5214E resist film: ~15 min
+*10 µm AZ 4562 resist film: ~45 min
+Typical process parameters:
+*O<sub>2</sub>: 400 ml/min
+*N<sub>2</sub>: 70 ml/min
+*Power: 1000 W
+A typical descum process in plasma asher 1 or 2:
+*O<sub>2</sub>: 70 ml/min
+*N<sub>2</sub>: 70 ml/min
+*Power: 150 W
+*Time : 10 min
+Be sure to wait for chamber to cool down to room temperature, before runinng descum processes in plasma asher 1 or 2. At a load of 2 Fused silica wafers, the amount of resist removed will be 10 - 1500 nm.
+'''NB: Use dedicated descum asher Plasma Asher 2: Descum for descumming.'''
 ==Plasma Asher 1==