Specific Process Knowledge/Thermal Process/Furnace Noble: Difference between revisions

From LabAdviser
Newer edit →
VisualWikitext
Tg (talk | contribs)
Bureaucrats, danchip, Administrators
360 edits
New page: ==Noble Furnace== This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius. The Noble Furnace is located in service room 3. ==Overview ...
 
Tg (talk | contribs)
Bureaucrats, danchip, Administrators
360 edits
No edit summary
Line 29: Line 29:
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:LightGrey; color:black"|Gasses on the system
|style="background:WhiteSmoke; color:black"|
|style="background:WhiteSmoke; color:black"|
 
*
*POCL<math>_3</math>
|-
|-
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Substrates

Revision as of 11:57, 29 November 2010

Noble Furnace

This furnace is used to grow oxide on metals or dirty wafers and to anneal wafers up to 1000 degree Celsius. The Noble Furnace is located in service room 3.

Overview of the performance of the Noble Furnace

Purpose Oxide growth, annealing
Performance
  • 25 4" wafers can be processed simultaneously
Process parameter range Process Temperature
  • 20-1000 oC
Process pressure
  • 1 atm
Gasses on the system
Substrates Batch size
  • 1-30 4" wafer (or 2" wafers) per run
Substrate material allowed
  • Silicon wafers (new from the box or RCA cleaned)
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/Furnace_Noble&oldid=4427"