Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions
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Information about exposure dose can be found here: [[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|Information on UV exposure dose]] | Information about exposure dose can be found here: [[Specific_Process_Knowledge/Lithography/Resist#UV_Resist|Information on UV exposure dose]] | ||
'''2µm AZ nLOF 2020''' | '''2µm AZ nLOF 2020:''' | ||
*PEB: 60s @ 110°C | *PEB: 60s @ 110°C | ||
*Development: SP 30s. For lift-off, use SP 60s (sidewall angle ~15°) | *Development: SP 30s. For lift-off, use SP 60s (sidewall angle ~15°) | ||
'''1.5µm AZ MiR 701''' | '''1.5µm AZ MiR 701:''' | ||
*PEB: 60s @ 110°C | *PEB: 60s @ 110°C | ||
*Development: SP 60s | *Development: SP 60s | ||
'''1.5µm AZ 5214E''' (positive process) | '''1.5µm AZ 5214E:''' (positive process) | ||
*No PEB | *No PEB | ||
*Development: SP 60s | *Development: SP 60s | ||
'''2.2µm AZ 5214E''' (image reversal) | '''2.2µm AZ 5214E:''' (image reversal) | ||
*Reversal bake: 60s-120s @ 110°C | *Reversal bake: 60s-120s @ 110°C | ||
*Flood exposure: ~200-500 mJ/cm<sup>2</sup> | *Flood exposure: ~200-500 mJ/cm<sup>2</sup> | ||
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'''6.2µm AZ 4562''' | '''6.2µm AZ 4562:''' | ||
*No PEB | *No PEB | ||
*Development: MP 3x60s | *Development: MP 3x60s | ||
'''10µm AZ 4562''' | '''10µm AZ 4562:''' | ||
*No PEB | *No PEB | ||
*Development: MP 4x60s or MP 5x60s | *Development: MP 4x60s or MP 5x60s | ||