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Specific Process Knowledge/Lithography/Development/Developer TMAH UV-lithography processing: Difference between revisions

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'''2µm AZ nLOF 2020'''
'''2µm AZ nLOF 2020'''
PEB: 60s @ 110°C
*PEB: 60s @ 110°C
 
*Development: SP 30s. For lift-off, use SP 60s (sidewall angle ~15°)
Development: SP 30s. For lift-off, use SP 60s (sidewall angle ~15°)




'''1.5µm AZ MiR 701'''
'''1.5µm AZ MiR 701'''
PEB: 60s @ 110°C
*PEB: 60s @ 110°C
 
*Development: SP 60s
Development: SP 60s




'''1.5µm AZ 5214E''' (positive process)
'''1.5µm AZ 5214E''' (positive process)
No PEB
*No PEB
 
*Development: SP 60s
Development: SP 60s




'''2.2µm AZ 5214E''' (image reversal)
'''2.2µm AZ 5214E''' (image reversal)
Reversal bake: 120s @ 110°C
*Reversal bake: 60s-120s @ 110°C
 
*Flood exposure: ~200-500 mJ/cm<sup>2</sup>
Flood exposure: ~200 mJ/cm<sup>2</sup>
*Development: SP 60s
 
Development: SP 60s




'''6.2µm AZ 4562'''
'''6.2µm AZ 4562'''
No PEB
*No PEB
 
*Development: MP 3x60s
Development: MP 3x60s




'''10µm AZ 4562'''
'''10µm AZ 4562'''
No PEB
*No PEB
 
*Development: MP 4x60s or MP 5x60s
Development: MP 4x60s or MP 5x60s


=Standard Processes=
=Standard Processes=