Jump to content

Specific Process Knowledge/Etch/Aluminum Oxide/Al2O3 Etch with ICP Metal: Difference between revisions

Bghe (talk | contribs)
Bghe (talk | contribs)
Line 91: Line 91:
|Etch rate
|Etch rate
|'''6.25 nm/min on 6" wafer''',  ''Summer sanvis@nanolab''
|'''6.25 nm/min on 6" wafer''',  ''Summer sanvis@nanolab''
|'''25 nm/min on small samples on Si carrier''', ''Summer sanvis@nanolab''
|'''25 nm/min on small samples on Si carrier''', ''Summer 2022 sanvis@nanolab''
|-
|-