Specific Process Knowledge/Etch/DRIE-Pegasus/processC: Difference between revisions
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== Process C == | == Process C == | ||
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Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %. | Process C is labelled Nano silicon etch. In the acceptance test the process was run on a 100 mm Nanolab wafer with a test pattern of a series of lines and dots with sizes ranging from 30 nm to 300 nm. The etch load was extremely high, approaching 100 %. | ||