Specific Process Knowledge/Lithography/Resist/DUVresist: Difference between revisions
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'''Positive DUV resist for spin coating in 1600-800nm thickness range:''' | '''Positive DUV resist for spin coating in 1600-800nm thickness range:''' | ||
*[[ | *Manufacturers website: [https://www.jsrmicro.be/semiconductor/lithography/jsr-krf-photoresists KrF M35G] | ||
*Datasheet: [https://labmanager.dtu.dk/view_binary.php?class=MiscDocument&id=4&name=datasheet+M35G.pdf KrF M35G] - '''requires login''' | |||
'''Negative DUV resist for spin coating in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range:''' | '''Negative DUV resist for spin coating in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range:''' | ||
*[[Media:UVN2300.pdf|UVN2300-0.8]]. | *[[Media:UVN2300.pdf|UVN2300-0.8]]. | ||
Revision as of 12:57, 2 February 2023
DUV resist overview
The spinning process will be performed by the customer together with the Photolith group of Nanolab. In case you would like to do DUV lithography please contact Lithography team, who will consult you and run your wafers together with you.
Bottom Anti Reflection Coating (BARC):
Positive DUV resist for spin coating in 600-300nm thickness range:
Positive DUV resist for spin coating in 1600-800nm thickness range:
Negative DUV resist for spin coating in 1400-800nm or diluted with EC Solvent in 1:1 in 400-200nm thickness range: