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Specific Process Knowledge/Thin film deposition/Deposition of CrSi: Difference between revisions

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'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_CrSi click here]'''
'''Feedback to this page''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Thin_film_deposition/Deposition_of_CrSi click here]'''
<i>This page is written by <b>Evgeniy Shkondin @DTU Nanolab</b> if nothing else is stated. <br>
All images and photos on this page belonges to <b>DTU Nanolab</b>.<br>
The fabrication and characterization described below were conducted in <b>2022 by Evgeniy Shkondin and Henri Jansen, DTU Nanolab</b>.<br></i>


=CrSi as a hard mask=
=CrSi as a hard mask=
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This page presents the results of CrSi bilayer deposition using <b>DC</b> (for Cr) and <b>RF</b> (for Si) Sputtering in Sputter-System Metal-Oxide(PC1) tool commonly known as "Cluster Lesker". The deposition targets are 3" <b>Cr</b> and <b>Si</b>. Source #3(DC) and #1(RF) was used.
This page presents the results of CrSi bilayer deposition using <b>DC</b> (for Cr) and <b>RF</b> (for Si) Sputtering in Sputter-System Metal-Oxide(PC1) tool commonly known as "Cluster Lesker". The deposition targets are 3" <b>Cr</b> and <b>Si</b>. Source #3(DC) and #1(RF) was used.


The deposition and characterization described below were conducted in <b>2021 by Evgeniy Shkondin and Henri Jansen, DTU Nanolab</b>. Spectroscopic Ellipsometry and X-ray reflectivity was used for characterization. The main focus of the study was the deposition rate and thickness measurements.
Spectroscopic Ellipsometry and X-ray reflectivity was used for characterization. The main focus of the study was the deposition rate and thickness measurements.


=Recipe=
=Recipe=