Specific Process Knowledge/Etch/DryEtchProcessing: Difference between revisions
No edit summary |
No edit summary |
||
Line 6: | Line 6: | ||
This page contains information that is common to dry etch instruments. | This page contains information that is common to dry etch instruments. | ||
[template:jjsbhfh] | [[template:jjsbhfh]] | ||
Revision as of 09:41, 1 February 2023
Feedback to this page: click here
Techniques, hardware and challenges common to all dry etch tools
This page contains information that is common to dry etch instruments.
Dry etch page | Description |
---|---|
Hardware comparison | Comparison of the different hardware setups |
Using carrier wafer | Processing different sizes of substrates by using a carriers: bonding or not bonding |
Optical Endpoint System | Using the OES technique to find endpoints and to diagnose plasmas |
LASER Endpoint System | Using the LEP technique to find endpoints between interfaces or at a etch depth (in transparent layers) |
Etch product volatility | Links to various tables with data on etch product volatility |