Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation: Difference between revisions
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== Proximity Effect Correction (PEC) == | == Proximity Effect Correction (PEC) == | ||
Proximity Effect Correction (or Proximity Error Correction) is a huge topic in EBL and here we will demonstrate the simplest way to apply PEC to your pattern using Beamer. For further information and more advanced uses of Beamer we advise users to go through [https://www.genisys-gmbh.com/webinar-series-beamer-training.html the tutorials on GenISys own website.] | Proximity Effect Correction (or Proximity Error Correction) is a huge topic in EBL and here we will demonstrate the simplest way to apply PEC to your pattern using Beamer. For further information and more advanced uses of Beamer we advise users to go through [https://www.genisys-gmbh.com/webinar-series-beamer-training.html the tutorials on GenISys own website.] | ||
The proximity effect comes from backscattered electrons that will provide a secondary exposure to the resist. Thus the exposure dose received by the resist has two components; the intentional exposure from the incident beam and an exposure from backscaterred electrons. | |||
== Pattern fracturing == | == Pattern fracturing == | ||
== Field sorting == | == Field sorting == | ||
== Export for writing == | == Export for writing == | ||