Specific Process Knowledge/Etch/AOE (Advanced Oxide Etch): Difference between revisions
| Line 19: | Line 19: | ||
*Silicon (oxy)nitride | *Silicon (oxy)nitride | ||
*Quartz | *Quartz | ||
*Silicon mask etching | |||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | !style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | ||
| Line 42: | Line 43: | ||
*He: 0-500 sccm | *He: 0-500 sccm | ||
*N<math>_2</math>: 0-1000 sccm | *N<math>_2</math>: 0-1000 sccm | ||
*SF<math>_6</math>: 0-300 sccm | |||
|- | |- | ||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | !style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | ||