Etching using the dry etch technique AOE (Advanced oxide etch)
The AOE can be used for etching silicon oxide, silicon (oxy)nitride and quartz. Look in the manuals for the AOE to see how to operate the machine (you can find the manuals in LabManager [1]).
A rough overview of the performance of AOE and some process related parameters
Purpose
Dry etch of
Silicon oxide
Silicon (oxy)nitride
Quartz
Silicon mask etching
Performance
Etch rates
~0.2-0.6 µm/min
Anisotropy
Typical profiles: 86-90 degrees
Process parameter range
Process pressure
~2-20 mTorr
Gas flows
CFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4}
FFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _8}
: 0-40 sccm
OFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
: 0-100 sccm
CFFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _4}
: 0-100 sccm
HFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
: 0-30 sccm
He: 0-500 sccm
NFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _2}
: 0-1000 sccm
SFFailed to parse (SVG (MathML can be enabled via browser plugin): Invalid response ("Math extension cannot connect to Restbase.") from server "https://wikimedia.org/api/rest_v1/":): {\displaystyle _6}
: 0-300 sccm
Substrates
Batch size
1 6" wafer per run (only when the system is setup to 6"
1 4" wafer per run
1 2" wafer per run (needs carrier)
Or several smaller pieces (needs carrier)
Substrate material allowed
Silicon with layers of silicon oxide or silicon (oxy)nitride