Specific Process Knowledge/Etch/Etching of Silicon Nitride: Difference between revisions

Revision as of 11:39, 30 October 2007

Silicon nitride can be etched using either wet chemistry or dry etch equipment. Wet chemistry is mainly used to remove all the nitride on the surface (backside and frontside) of a wafer. Dry etching etches one side at a time and can be used to etch structures with several masking materials.

Comparison of wet Silicon Nitride etch and RIE etch for etching of Silicon Nitride

	Wet Silicon Nitride etch	RIE
What is it good for:	Isotropic etch Good for removing all nitride on a wafer surface without a mask	Can etch anisotropic: vertical sidewalls
Possible masking materials:	?	Photoresist Silicon Oxide Aluminium Chromium (ONLY RIE2!)
Process volume	25 wafers at a time	1 wafer at a time
Size of substrate	4" wafers	4" wafers or smaller pieces

@@ Line 3: / Line 3: @@
 *[[Specific Process Knowledge/Etch/Wet Silicon Nitride Etch|Wet Silicon Nitride Etch]]
 *[[/Etch of Silicon Nitride using RIE|Etch of Silicon Nitride using RIE]]
+==Comparison of wet Silicon Nitride etch and RIE etch for etching of Silicon Nitride==
+{| border="1" cellspacing="0" cellpadding="3" align="center"
+!
+! Wet Silicon Nitride etch
+! RIE
+|-
+| What is it good for:
+|
+*Isotropic etch
+*Good for removing all nitride on a wafer surface without a mask
+|
+*Can etch anisotropic: vertical sidewalls
+|-
+|Possible masking materials:
+|?
+|
+*Photoresist
+*Silicon Oxide
+*Aluminium
+*Chromium (ONLY RIE2!)
+|-
+|Process volume
+|
+*25 wafers at a time
+|
+*1 wafer at a time
+|-
+|Size of substrate
+|
+*4" wafers
+|
+" wafers or smaller pieces
+|-
+|}