Specific Process Knowledge/Thermal Process/C3 Anneal-bond furnace: Difference between revisions
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[[Category: Equipment |Thermal C3]] | [[Category: Equipment |Thermal C3]] | ||
[[Category: Thermal process|C3]] | [[Category: Thermal process|C3]] | ||
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==Anneal-bond furnace (C3)== | ==Anneal-bond furnace (C3)== | ||
[[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1]] | [[Image:C3.JPG|thumb|300x300px|Anneal-bond furnace (C3). Positioned in cleanroom B-1/ Photo: DTU Nanolab internal]] | ||
The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler. | The Anneal-bond furnace (C3) is a Tempress horizontal furnace for oxidation and annealing of new and processed (e.g. bonded) silicon wafers. O<sub>2</sub>) is used as an oxidant for dry oxidation, and for wet oxidation water vapour is being generated by a bubbler. | ||