Specific Process Knowledge/Thermal Process/Annealing: Difference between revisions
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==Annealing== | ==Annealing== | ||
Revision as of 14:09, 31 January 2023
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This page is written by DTU Nanolab internal
Annealing
At DTU Nanolab we have five furnaces and an RTP (Rapid thermal annealing) that can be used annealing: Anneal-Oxide furnace (C1), Anneal-bond furnace (C3), Al_anneal furnace (C4), Multipurpose Anneal furnace and Jipelec RTP. Annealing normally takes place in an N2 atmosphere, or it can be done in H2 or a H2-N2 gas mixture in the Multipurpose Anneal furnace. PECVD PBSG glass is annealed in a wet atmosphere which will also oxidize the silicon substrate.
A 20 minutes N2 annealing step is also included in all recipes on the oxidation furnace, this annealing is done after the oxidation.
Comparison of the annealing furnaces
General description | Annealing of 4" and 6" wafers. Annealing of wafers from the LPCVD furnaces and from PECVD4. | Annealing of wafers from Wafer Bonder 02 and from and PECVD4 and PECVD3. | Annealing of wafers with Al and ALD deposited AL2O3 and TiO2. | Rapid thermal annealing | Annealing, oxidation and resist pyrolysis of different samples |
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Annealing gas |
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Process temperature |
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Substrate and Batch size |
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Allowed materials |
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