Specific Process Knowledge/Etch/Etching of Silicon: Difference between revisions
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*Good selectivity to photoresist | *Good selectivity to photoresist | ||
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|Possible masking materials: | |||
|Silicon Nitride | |||
|? | |||
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*Photoresist | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Aluminium | |||
*Chromium (ONLY RIE2!) | |||
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*Photoresist | |||
*Silicon Oxide | |||
*Silicon Nitride | |||
*Aluminium | |||
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Revision as of 11:26, 30 October 2007
Etch of silicon can be done by either wet etch or dry etch. The standard setups for this here at DANCHIP are:
Wet etches:
- KOH etch
- Wet PolySilicon etch
Dry etches:
- Dry etch using RIE1 or RIE2
- Dry etch using ASE
Comparison of KOH etch, wet PolySilicon etch, RIE etch and ASE etch for etching of Silicon
KOH | PolySilicon etch | RIE | ASE | |
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What is it good for: |
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Possible masking materials: | Silicon Nitride | ? |
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