Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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# Nanoholes of 200 nm with 400 nm pitch (100 nm Al2O3 + 65 nm BARC + 750 nm DUV). | # Nanoholes of 200 nm with 400 nm pitch (100 nm Al2O3 + 65 nm BARC + 750 nm DUV). | ||
The Si/Al<sub>2</sub>O<sub>3</sub>/BARC/DUV stack was first processed in Pegasus 2 to etch the BARC layer, and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub>/Ar recipe. With pillars and holes, the BARC was etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. The nanoholes had two different approaches, starting with 260 minutes on the III-V ICP. However, it was seen that after the III-V ICP process, the leftover resist on the sample was removed during the CORE process on Pegasus 2. | The Si / Al<sub>2</sub>O<sub>3</sub> / BARC / DUV stack was first processed in Pegasus 2 to etch the BARC layer, and the alumina was etched in the III-V ICP, using a BCl<sub>3</sub> / Ar recipe. With pillars and holes, the BARC was etched for 12 min on Pegasus 2, followed by 90 minutes on the III-V ICP. The nanoholes had two different approaches, starting with 260 minutes on the III-V ICP. However, it was seen that after the III-V ICP process, the leftover resist on the sample was removed during the CORE process on Pegasus 2. | ||
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