Specific Process Knowledge/Thin film deposition/Lesker: Difference between revisions
No edit summary |
|||
| Line 1: | Line 1: | ||
== LESKER Sputter Tool== | |||
The purpose of the sputter is to deposit magnetic metals and dielectrica on a single 4" or 6" wafer at a time. | |||
It can be a problem to take wafers from the sputter and into the other machines in the cleanroom, since it is not very clean. In principle the sputter should be the last step before you take your wafers out of the cleanroom. If you need to take process your wafers further please contact the PVD group so they can help you. | |||
Lift off should never be done in the normal lift off bath in RR4 it should always be done in the dedicated lift off bath opposite the sputter. | |||
====Materials for sputtering==== | |||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Gold|Gold (Au)]] | |||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Nickel|Nickel (Ni)]] | |||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silver|Silver (Ag)]] | |||
*[[Specific Process Knowledge/Thin film deposition/Deposition of Silicon|Silicon (Si)]] | |||
*Iron (Fe) | |||
Contcat the pvd-group if you have special needs (pvd@danchip.dtu.dk). | |||
==Overview of the performance of Alcatel and some process related parameters== | |||
{| border="2" cellspacing="0" cellpadding="10" | |||
|- | |||
!style="background:silver; color:black;" align="left"|Purpose | |||
|style="background:LightGrey; color:black"|Deposition of magnetic metals and dielectrica ||style="background:WhiteSmoke; color:black"| | |||
*Sputtering of magnetic metals and Silicon | |||
|- | |||
!style="background:silver; color:black" align="left" valign="top" rowspan="2"|Performance | |||
|style="background:LightGrey; color:black"|Film thickness||style="background:WhiteSmoke; color:black"| | |||
* | |||
|- | |||
|style="background:LightGrey; color:black"|Deposition rates | |||
|style="background:WhiteSmoke; color:black"| | |||
* | |||
|- | |||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Process parameter range | |||
|style="background:LightGrey; color:black"|Process Temperature | |||
|style="background:WhiteSmoke; color:black"| | |||
*100-200<math>^o</math>C | |||
|- | |||
|style="background:LightGrey; color:black"|Process pressure | |||
|style="background:WhiteSmoke; color:black"| | |||
*3-5 mTorr | |||
|- | |||
|style="background:LightGrey; color:black"|Process Gases | |||
|style="background:WhiteSmoke; color:black"| | |||
*Ar | |||
*N<math>_2</math> | |||
*O<math>_2</math> | |||
|- | |||
!style="background:silver; color:black" align="left" valign="top" rowspan="3"|Substrates | |||
|style="background:LightGrey; color:black"|Batch size | |||
|style="background:WhiteSmoke; color:black"| | |||
*4" or 6" | |||
|- | |||
| style="background:LightGrey; color:black"|Substrate material allowed | |||
|style="background:WhiteSmoke; color:black"| | |||
*Silicon wafers | |||
* | |||
|- | |||
| style="background:LightGrey; color:black"|Material allowed on the substrate | |||
|style="background:WhiteSmoke; color:black"| | |||
* | |||
|- | |||
|} | |||
==Film quality optimization== | ==Film quality optimization== | ||
''By Bjarke Thomas Dalslet @Nanotech.dtu.dk'' | ''By Bjarke Thomas Dalslet @Nanotech.dtu.dk'' | ||