Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation: Difference between revisions
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[[File:9500AlignmentMarks.png|1000px|center|frameless]] | [[File:9500AlignmentMarks.png|1000px|center|frameless]] | ||
Global alignment '''(SETWFR)''' has a rough scan and a fine scan setting. Initially the mark is found using the rough scan setting, which is set to scan a long distance, typically 500 µm. Once the mark is located the machine will continue with the fine scan setting which will tyipcally scan <6 µm. In order for the machine to detect the mark on the rough scan setting the cross must have sufficient width and hence the cross is typically divided into a wide part and a slim part in the center. | Global alignment '''(SETWFR)''' has a rough scan and a fine scan setting. Initially the mark is found using the rough scan setting, which is set to scan a long distance, typically 500 µm. Once the mark is located the machine will continue with the fine scan setting which will tyipcally scan <6 µm. In order for the machine to detect the mark on the rough scan setting the cross must have sufficient width and hence the cross is typically divided into a wide part and a slim part in the center. It is recommendable to use global marks of up to 1000 µm in height and width to make them easy and fast to find. | ||
Chip marks are only scanned after a global alignment and hence the chip mark positions are usually very well known and the chip marks can be quite small. | |||
[[File:RoughFineScan.png|250px|center|frameless]] | [[File:RoughFineScan.png|250px|center|frameless]] | ||