Specific Process Knowledge/Lithography/EBeamLithography/JEOLPatternPreparation: Difference between revisions

Revision as of 16:17, 30 January 2023 view source Thope (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231 2,178 edits →Design of global marks and chip marks ← Older edit		Revision as of 16:25, 30 January 2023 view source Thope (talk \| contribs) DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231 2,178 edits →Design of global marks and chip marks Newer edit →
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	Global alignment '''(SETWFR)''' has a rough scan and a fine scan setting. Initially the mark is found using the rough scan setting, which is set to scan a long distance, typically 500 µm. Once the mark is located the machine will continue with the fine scan setting which will tyipcally scan <10 µm. In order for the machine to see the mark on the rough scan setting the cross must have sufficient width		Global alignment '''(SETWFR)''' has a rough scan and a fine scan setting. Initially the mark is found using the rough scan setting, which is set to scan a long distance, typically 500 µm. Once the mark is located the machine will continue with the fine scan setting which will tyipcally scan <10 µm. In order for the machine to see the mark on the rough scan setting the cross must have sufficient width

			[[File:RoughFineScan.png\|400px\|center\|frameless]]