Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-2/ORE with Al2O3 mask: Difference between revisions
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=Al<sub>2</sub>O<sub>3</sub> mask= | =Al<sub>2</sub>O<sub>3</sub> mask= | ||
In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in the 150 mm Si wafers using the | In these samples, the hard mask, Al<sub>2</sub>O<sub>3</sub>, was coated in the 150 mm Si wafers using the ALD 1 tool. These sets of samples also had the lithography process done in the DUV stepper to deposit 65 nm of BARC and 750 nm of DUV resist. Three different patterns were created after the development: | ||
# Pillars of 1 µm with 1 µm pitch (50 nm Al2O3 + 65 nm BARC + 750 nm DUV). | # Pillars of 1 µm with 1 µm pitch (50 nm Al2O3 + 65 nm BARC + 750 nm DUV). | ||
# Holes of 1 µm with | # Holes of 1 µm with 1 µm pitch (50 nm Al2O3 + 65 nm BARC + 750 nm DUV). | ||
# Nanoholes of 200 nm with 400 nm pitch (100 nm Al2O3 + 65 nm BARC + 750 nm DUV). | # Nanoholes of 200 nm with 400 nm pitch (100 nm Al2O3 + 65 nm BARC + 750 nm DUV). | ||