Specific Process Knowledge/Lithography/4562: Difference between revisions
| Line 34: | Line 34: | ||
'''Development speed:''' | '''Development speed:''' | ||
*Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min | *Puddle development in 2.38% TMAH (AZ 726 MIF): ~2 µm/min | ||
'''Multi-puddle development:''' | '''Multi-puddle development:''' | ||
The recommended development speed in 2.38% TMAH (AZ 726 MIF) for AZ 4562 is 2 µm/min. A 6.2µm resist film thus requires ~3 min development, recommended as three separate 60 s puddles. 10 µm AZ 4562 has successfully been developed using 4 x 60 s development. | The recommended development speed in 2.38% TMAH (AZ 726 MIF) for AZ 4562 is 2 µm/min. A 6.2µm resist film thus requires ~3 min development, recommended as three separate 60 s puddles. 10 µm AZ 4562 has successfully been developed using 4 x 60 s development. | ||