Specific Process Knowledge/Lithography/nLOF: Difference between revisions
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'''Development speed:''' | '''Development speed:''' | ||
*Puddle development in 2.38% TMAH (AZ 726 MIF): ~4 µm/min | *Puddle development in 2.38% TMAH (AZ 726 MIF): ~4 µm/min | ||
A 2 µm nLOF resist film is fully developed in 20-30 s in 2.38% TMAH (AZ 726 MIF). However, the development can be continued to 60 s in order to get a more negative resist profile (due to increased under-cut). | A 2 µm nLOF resist film is fully developed in 20-30 s in 2.38% TMAH (AZ 726 MIF). However, the development can be continued to 60 s in order to get a more negative resist profile (due to increased under-cut). | ||