Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions
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Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table. | Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table. | ||
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!style="background:LightGray" | Sample ID | !style="background:LightGray" | Sample ID | ||