Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
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All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH. | All doses are for standard silicon wafers, unless otherwise stated. Development is done using 2.38% TMAH. | ||
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'''Dehydration reducing measures used for testing AZ MiR 701:'''<br> | '''Dehydration reducing measures used for testing AZ MiR 701:'''<br> | ||
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure. | The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure. | ||
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'''Dehydration reducing measures used for testing AZ MiR 701:'''<br> | '''Dehydration reducing measures used for testing AZ MiR 701:'''<br> | ||
The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure. | The CDA used for the pneumatic autofocus will dehydrate the resist. To reduce this effect, the writehead is parked far away from the write area while setting up the job for at least a few minutes, before starting the exposure. | ||
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