Specific Process Knowledge/Lithography/Resist/UVresist: Difference between revisions
Tag: Manual revert |
|||
| Line 204: | Line 204: | ||
[[Image:AZ photoresists spectral sensitivity - remake v1.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption.]] | [[Image:AZ photoresists spectral sensitivity - remake v1.png|400x400px|thumb|Spectral sensitivity of AZ resists represented as optical absorption.]] | ||
During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction | During exposure of the resist, the photoinitiator, or photo-active component, reacts with the exposure light, and starts the reaction which makes the resist develop in the developer. | ||
In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake, it makes the resist ''in''soluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose. | In a positive resist, it makes the resist become soluble in the developer. In a negative resist, usually assisted by thermal energy in the post-exposure bake (PEB), it makes the resist ''in''soluble in the developer. The amount of light required to fully develop the resist in the development process, is the exposure dose. | ||
The optimal exposure dose is a function of many parameters, including the type of resist, the resist thickness, and the sensitivity of the resist. | The optimal exposure dose is a function of many parameters, including the type of resist, the resist thickness, and the sensitivity of the resist. | ||