Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions

@@ Line 100: / Line 100: @@
 {| border="1" style="text-align: center; width: 550px; height: 100px;"
-|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Wafers available in the cleanroom'''
+|colspan="9" style="text-align: center;" style="background: #efefef;" | '''Details for each experiment'''
 |-
-!scope="row" width="15%"|&nbsp;
+!width="15%" |Sample ID
-!width="15%" |Size
+!width="15%" |Gas
-!width="15%" |Type
+!width="15%" |Flow (SCCM)
-!width="15%" |Thickness
+!width="15%" |Temperature (C)
-!width="15%" |Resistivity
+!width="15%" |Power (%)
+!width="15%" |Pressure (mbar)
+!width="15%" |Time (s)
+!width="15%" |HF dip
+!width="15%" |Position
 |-
-!SSP (single side polished)
+!RTA 1
-|2"
+|Ar
-|P
+|40
-|500 µm
+|1328
-|1-20 Ωcm
+|80
+|12
+|180
+|No
+|Up
 |-
 !SSP (single side polished)