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Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions

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==== Argon RTA ====
==== Argon RTA ====
Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table.
Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table.
{| border="1" style="text-align: center; width: 550px; height: 100px;"
|colspan="6" style="text-align: center;" style="background: #efefef;" | '''Wafers available in the cleanroom'''
|-
!scope="row" width="15%"| 
!width="15%" |Size
!width="15%" |Type
!width="15%" |Thickness
!width="15%" |Resistivity
|-
!SSP (single side polished)
|2"
|P
|500 µm
|1-20 Ωcm
|-
!SSP (single side polished)
|4"
|N or P
|525 µm
|1-20 Ωcm
|-
!SSP (single side polished)
|6"
|N
|625 µm
|10-20 Ωcm
|-
!SSP (single side polished)
|8"
|N
|725 µm
|1-10 Ωcm
|-
!DSP (double side polished)
|4"
|N or P
|350 µm
|1-20 Ωcm
|-
!DSP (double side polished)
|4"
|N
|500 µm
|1-20 Ωcm
|-
!DSP (double side polished)
|6"
|N
|500 µm
|1-20 Ωcm
|-
!Fused silica wafers
|4"
| 
|500 µm or 1 mm
| 
|-
!Boron glass wafers
|4"
| 
|500 µm
| 
|-
!pre-processed<sup>{{fn|1}}</sup>
|4" and 6"
|&nbsp;
|&nbsp;
|&nbsp;
|-
|}


==== RTH ====
==== RTH ====