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| ==== Argon RTA ==== | | ==== Argon RTA ==== |
| Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table. | | Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table. |
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| {| border="1" cellspacing="3" cellpadding="10"
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|
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| !colspan="2" border="none" style="background:silver; color:black;" align="center"|Specifics
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| |style="background:WhiteSmoke; color:black;" align="center"|<b>Allowed</b>
| |
| |-
| |
| !style="background:silver; color:black" align="center" valign="center" rowspan="1"|Temperature
| |
| |style="background:LightGrey; color:black"|
| |
| |style="background:WhiteSmoke; color:black"|
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| * up to 1250 <sup>o</sup>C
| |
| |-
| |
| !style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process gas
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| |style="background:LightGrey; color:black"|Ar
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| |style="background:WhiteSmoke; color:black"|
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| *up to 2000 SCCM
| |
| |-
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| |style="background:LightGrey; color:black"|O<sub>2
| |
| |style="background:WhiteSmoke; color:black"|
| |
| *up to 2000 SCCM
| |
| |-
| |
| |style="background:LightGrey; color:black"|NH<sub>3
| |
| |style="background:WhiteSmoke; color:black"|
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| *up to 2000 SCCM
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| |-
| |
| |style="background:LightGrey; color:black"|5% H<sub>2</sub>/Ar
| |
| |style="background:WhiteSmoke; color:black"|
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| *up to 2000 SCCM
| |
| |-
| |
| !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Pressure
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| |style="background:LightGrey; color:black"|Valve (APC)
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| |style="background:WhiteSmoke; color:black"|
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| *0<sup>o</sup> - 100<sup>o</sup>
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| |-
| |
| |style="background:LightGrey; color:black"|Controller
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| |style="background:WhiteSmoke; color:black"|
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| *up to 12 mbar
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| |-
| |
| !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
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| |style="background:LightGrey; color:black"|Batch size
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| |style="background:WhiteSmoke; color:black"|
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| *Single-wafer process
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| |-
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| |style="background:LightGrey; color:black"|Substrate size
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| |style="background:WhiteSmoke; color:black"|
| |
| *Chips on carrier
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| *100 mm or 150 mm wafers
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| |-
| |
| | style="background:LightGrey; color:black"|Allowed materials
| |
| |style="background:WhiteSmoke; color:black"|
| |
| *Silicon
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| *Silicon Nitride
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| *Aluminum Oxide
| |
| |-
| |
| |}
| |
|
| |
|
| ==== RTH ==== | | ==== RTH ==== |
