Jump to content

Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions

← Older editNewer edit →
VisualWikitext
Indiogo (talk | contribs)
NLAB-Employees-701, NLAB-LabmanagerAllUsers
462 edits
Indiogo (talk | contribs)
NLAB-Employees-701, NLAB-LabmanagerAllUsers
462 edits
Line 98: Line 98:
==== Argon RTA ====
==== Argon RTA ====
Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table.
Rapid thermal annealing sequences were developed and studied using only argon (Ar). Some experiments were repeated in an attempt to establish a reproducibility study. Type I samples were used and processed on top of silicon carrier wafers, with no bonding required. The details for each experiment are presented in the following table.
{| border="1" cellspacing="3" cellpadding="10"
!colspan="2" border="none" style="background:silver; color:black;" align="center"|Specifics
|style="background:WhiteSmoke; color:black;" align="center"|<b>Allowed</b>
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="1"|Temperature
|style="background:LightGrey; color:black"|
|style="background:WhiteSmoke; color:black"|
* up to 1250 <sup>o</sup>C
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="4"|Process gas
|style="background:LightGrey; color:black"|Ar
|style="background:WhiteSmoke; color:black"|
*up to 2000 SCCM
|-
|style="background:LightGrey; color:black"|O<sub>2
|style="background:WhiteSmoke; color:black"|
*up to 2000 SCCM
|-
|style="background:LightGrey; color:black"|NH<sub>3
|style="background:WhiteSmoke; color:black"|
*up to 2000 SCCM
|-
|style="background:LightGrey; color:black"|5% H<sub>2</sub>/Ar
|style="background:WhiteSmoke; color:black"|
*up to 2000 SCCM
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="2"|Pressure
|style="background:LightGrey; color:black"|Valve (APC)
|style="background:WhiteSmoke; color:black"|
*0<sup>o</sup> - 100<sup>o</sup>
|-
|style="background:LightGrey; color:black"|Controller
|style="background:WhiteSmoke; color:black"|
*up to 12 mbar
|-
!style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
|style="background:LightGrey; color:black"|Batch size
|style="background:WhiteSmoke; color:black"|
*Single-wafer process
|-
|style="background:LightGrey; color:black"|Substrate size
|style="background:WhiteSmoke; color:black"|
*Chips on carrier
*100 mm or 150 mm wafers
|-
| style="background:LightGrey; color:black"|Allowed materials
|style="background:WhiteSmoke; color:black"|
*Silicon
*Silicon Nitride
*Aluminum Oxide
|-
|}


==== RTH ====
==== RTH ====
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Thermal_Process/RTP_Annealsys"