Specific Process Knowledge/Thermal Process/RTP Annealsys: Difference between revisions
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==Previous work on RTP Annealsys== | ==Previous work on RTP Annealsys== | ||
===General Description=== | ===General Description=== | ||
[[File:Test samples.png|700px|thumb|right|Schematic representation of the different types of test samples. The drawing is not to scale. The depth in Type III samples varies between 300 nm and 400 nm. The native silicon oxide on Type V samples was stripped before processing, using a BHF with surfactant bath (12% HF with ammonium fluoride etching mixture).]] | |||
====Experiments Overview==== | ====Experiments Overview==== | ||
Considering the available process gases, various types of RTP were studied, such as rapid thermal annealing '''(RTA)''', hydrogenation '''(RTH)''', oxidation '''(RTO)''', vacuum '''(RTV)''' and Black Si smoothing '''(Clean BSi)'''. In addition, it was developed a sequence for tool calibration. | Considering the available process gases, various types of RTP were studied, such as rapid thermal annealing '''(RTA)''', hydrogenation '''(RTH)''', oxidation '''(RTO)''', vacuum '''(RTV)''' and Black Si smoothing '''(Clean BSi)'''. In addition, it was developed a sequence for tool calibration. | ||
====Test Samples==== | ====Test Samples==== | ||
Various test samples were used, which are represented on the right. Type I, II and III samples are 1 cm x 1 cm chips. Type IV and V are 150 mm Si <100> n-type wafers, with grown BSi and without native oxide, respectively. | Various test samples were used, which are represented on the right. Type I, II and III samples are 1 cm x 1 cm chips. Type IV and V are 150 mm Si <100> n-type wafers, with grown BSi and without native oxide, respectively. | ||