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| {{:Specific Process Knowledge/Lithography/Coaters/GammaUV}} | | {{:Specific Process Knowledge/Lithography/Coaters/GammaUV}} |
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| ==Spin Coater: Gamma E-beam and UV==
| | {{:Specific Process Knowledge/Lithography/Coaters/GammaEbeam}} |
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| '''Feedback to this section''': '''[mailto:labadviser@nanolab.dtu.dk?Subject=Feed%20back%20from%20page%20http://labadviser.nanolab.dtu.dk/index.php/Specific_Process_Knowledge/Lithography/Coaters#Spin_Coater:_Gamma_E-beam_and_UV click here]'''
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| ''[[Specific_Process_Knowledge/Lithography/Coaters#Coater_Comparison_Table|Coater comparison table]]''
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| [[image:Gamma_4M_-_E-beam_&_UV_full.JPG|400px|right|thumb|Spin Coater: Gamma E-beam & UV in E-5]]
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| Spin Coater: Gamma E-beam and UV will be installed at DTU Nanolab in June 2017. It is a Gamma 4M cluster from Süss MicroTec with spin coating, vapour priming, and baking modules. The system handles 2", 4", and 6" wafers without size conversion, using two separate coater stations.
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| The 2" coater station is equipped with 2 different resists lines:
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| *AZ 5214E
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| *AR-P 6200.09 (CSAR)
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| and
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| *1 syringe, which can be used for various resists (anisole or PGMEA-based).
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| The 4"/6" coater station is equipped with 4 different resists lines:
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| *AZ 5214E
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| *AZ MiR 701
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| *AR-P 6200.09 (CSAR)
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| *AZ 4562
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| The processes that are available on the system are developed by Nanolab. Upon request, it is possible to establish new processes. Use of the syringe requires special training, and would as a starting point require batches in excess of 20 wafers.
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| '''[https://www.youtube.com/watch?v=3JhM3rmLVpA Training video]''' (for Spin Coater: Gamma UV)
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| '''The user manual, quality control procedures and results, user APVs, and contact information can be found in [http://labmanager.dtu.dk/function.php?module=Machine&view=view&mach=417 LabManager]'''
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| ===Process information===
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| [[Specific Process Knowledge/Lithography/Coaters/Spin Coater: Gamma E-beam and UV processing|General Process information]]
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| [[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Standard_Processes|Standard Processes:]]
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| *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Quality_Control_.28QC.29|Quality Control (QC)]]
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| *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#HMDS_priming_2|HMDS]]
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| *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#AZ_5214E_coating|AZ 5214E on Coater1 and Coater2]]
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| *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#AZ_MiR_701_.2829cps.29_coating|AZ MiR 701 on Coater2]]
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| *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#AR-P_6200_.28CSAR.29_coating|CSAR on Coater1 and Coater2]]
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| *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#AZ_4562_coating|AZ 4562 on Coater2]]
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| *[[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Edge_bead_removal_2|Edge bead removal on Coater1 and Coater2]]
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| [[Specific_Process_Knowledge/Lithography/Coaters/Spin_Coater:_Gamma_E-beam_and_UV_processing#Syringe_Processes|Syringe Processes]]
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| === Equipment performance and process related parameters ===
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| {| border="2" cellspacing="0" cellpadding="2"
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| !style="background:silver; color:black;" align="center" width="60"|Purpose
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| |style="background:LightGrey; color:black"|
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| |style="background:WhiteSmoke; color:black" align="center"|
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| *HMDS priming
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| *Spin coating of anisole based E-beam resists
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| *Spin coating of PGMEA based UV resists
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| *Soft baking
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| *Edge bead removal (CSAR and novolac-based UV resists)
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| |-
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| !style="background:silver; color:black;" align="center" width="60"|Resist
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| |style="background:LightGrey; color:black"|
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| |style="background:WhiteSmoke; color:black" align="center"|
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| * AR-P 6200.09 (CSAR)
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| * AZ 5214E
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| * AZ MiR 701 (29cps) ''4"/6" only''
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| * AZ 4562 ''4"/6" only''
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| * 30cc syringe dispense ''2" only''
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| |-
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| !style="background:silver; color:black" align="center" valign="center" rowspan="2"|Performance
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| |style="background:LightGrey; color:black"|HMDS contact angle
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| |style="background:WhiteSmoke; color:black" align="center"|
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| 60 - 80° (on Silicon)
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| |-
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| |style="background:LightGrey; color:black"|Coating thickness
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| |style="background:WhiteSmoke; color:black" align="center"|
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| * AR-P 6200.09 (CSAR): 170-500 nm
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| * AZ 5214E: 1.5-5 µm
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| * AZ MiR 701: 1.5-4 µm
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| * AZ 4562: 5-25 µm
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| |-
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| !style="background:silver; color:black" align="center" valign="center" rowspan="5"|Process parameters
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| |style="background:LightGrey; color:black"|Priming temperature
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| |style="background:WhiteSmoke; color:black" align="center"|
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| 120 °C
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| |-
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| |style="background:LightGrey; color:black"|Spin speed
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| |style="background:WhiteSmoke; color:black" align="center"|
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| 10 - 6000 rpm
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| |style="background:LightGrey; color:black"|Spin acceleration
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| |style="background:WhiteSmoke; color:black" align="center"|
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| 10 - 10000 rpm/s
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| |-
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| |style="background:LightGrey; color:black"|Hotplate temperature
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| |style="background:WhiteSmoke; color:black" align="center"|
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| 25 - 200 °C
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| |-
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| |style="background:LightGrey; color:black"|Cool plate temperature
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| |style="background:WhiteSmoke; color:black" align="center"|
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| 21 °C
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| |-
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| !style="background:silver; color:black" align="center" valign="center" rowspan="3"|Substrates
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| |style="background:LightGrey; color:black"|Substrate size
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| |style="background:WhiteSmoke; color:black" align="center"|
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| * 50 mm wafers
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| * 100 mm wafers
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| * 150 mm wafers
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| |-
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| | style="background:LightGrey; color:black"|Allowed materials
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| |style="background:WhiteSmoke; color:black" align="center"|
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| Silicon, III-V, and glass
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| No resist or crystalbond allowed in the HMDS module
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| |-
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| |style="background:LightGrey; color:black"|Batch
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| |style="background:WhiteSmoke; color:black" align="center"|
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| 1 - 25
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| |-
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| |}
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| <br clear="all" />
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| ==Spin Coater: RCD8== | | ==Spin Coater: RCD8== |