Jump to content

Specific Process Knowledge/Lithography/EBeamLithography/EBLLandingpage: Difference between revisions

← Older editNewer edit →
VisualWikitext
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,178 edits
Thope (talk | contribs)
DCH-Employees-701, NLAB-Employees-701, NLAB-LabmanagerAllUsers, NLAB-Nlab347-labadviser-users-35231
2,178 edits
Line 352: Line 352:


== Development ==
== Development ==
= E-beam resists =
== Standard E-beam resists and process guidelines ==
DTU Nanolab offers a limited number of standard EBL resist for our users. Our standard resist and process guidelines are summarized below. CSAR (AR-P 6200.09) is installed on Spin coater Gamma E-beam & UV for easy spin coating of 2", 4" and 6" substrates. Other substrate sizes or resist have to be used in the Labspin 2/3 coating systems. The standard resist bottles are stored in the chemical cupboard in E-4.
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-
|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spin Coater'''
|'''Thinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
|-
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/CSAR|CSAR AR-P 6200]]'''
|Positive
|[http://www.allresist.com AllResist]
|Standard positive resist, very similar to ZEP520.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-P6200_CSAR62english_Allresist_product-information.pdf AR-P 6200 info]
|Gamma E-beam & UV or Labspin 2/3
|Anisole
|
*AR-600-546
*AR-600-548
*N50
*MIBK:IPA
|IPA
|
*AR-600-71
*Remover 1165
|[[media:Process_Flow_CSAR.docx‎|Process Flow CSAR.docx‎]] <br> [[media:Process Flow CSAR ESPACER.docx|Process Flow CSAR with ESPACER]] <br> [[media:Process Flow CSAR with Al.docx|Process Flow CSAR with Al]] <br> [[media:Process_Flow_LOR5A_CSAR_Developer_TMAH_Manual.docx|Process Flow LOR5A with CSAR]] <br>
|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ARN8200|Medusa AR-N 8200]]'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam and DUV sensitive resist.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/SXAR-N8200-1_english_Allresist_product_information.pdf AR-N 8200 info]
|Labspin 2/3
|AR 600-07
|AR 300-47:DIW (1:1)
|DIW
|BOE
|
|-
|-style="background:LightGrey; color:black"
|'''AR-N 7500'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist.
|[https://www.allresist.com/wp-content/uploads/sites/2/2020/03/AR-N7500_english_Allresist_product-information.pdf AR-N 7500 info]
|Labspin 2/3
|PGMEA
|
*AR 300-47:DIW (4:1)
*MIF726:DIW (8:5)
|DIW
|
*AR 300-73
*O2 plasma
|
|}
<br/>
== Non-Standard E-beam resists ==
It is possible to obtain permission to user other resists at DTU Nanolab, users must however provide these resists and possibly developers themselves. A non-exhaustive list of user supplied EBL resist used at DTU Nanolab and some process guidelines can be found in the table below.
{|border="1" cellspacing="1" cellpadding="3" style="text-align:left;" width="95%"
|-
|-
|-style="background:silver; color:black"
|'''Resist'''
|'''Polarity'''
|'''Manufacturer'''
|'''Comments'''
|'''Technical reports'''
|'''Spin Coater'''
|'''Thinner'''
|'''Developer'''
|'''Rinse'''
|'''Remover'''
|'''Process flows (in docx-format)'''
|-
|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ZEP520A|ZEP520A]]'''
|Positive resist, contact [mailto:Lithography@Nanolab.dtu.dk Lithography] if you plan to use this resist
|ZEON
|Positive resist
|[[media:ZEP520A.pdf|ZEP520A.pdf]], [[media:ZEP520A.xls|ZEP520A spin curves on SSE Spinner]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|ZED-N50/Hexyl Acetate,n-amyl acetate, oxylene. [[media:JJAP-51-06FC05.pdf‎|JJAP-51-06FC05.pdf‎]], [[media:JVB001037.pdf‎|JVB001037.pdf‎]]
|IPA
|acetone/1165
|[[media:Process_Flow_ZEP.docx|Process_Flow_ZEP.docx]]
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/ARP617|Copolymer AR-P 617]]'''
|Positive
|[http://www.allresist.com AllResist]
|Approved, not tested yet. Used for trilayer (PE-free) resist-stack or double-layer lift-off resist stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|[[media:AR_P617.pdf‎|AR_P617.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|PGME
|AR 600-55, MIBK:IPA
|
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]
|-
|-style="background:LightGrey; color:black"
|'''[[Specific_Process_Knowledge/Lithography/mrEBL6000|mr EBL 6000.1]]'''
|Negative
|[http://http://www.microresist.de/home_en.htm MicroResist]
|Standard negative resist
|[[media:mrEBL6000 Processing Guidelines.pdf‎|mrEBL6000 processing Guidelines.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|mr DEV
|IPA
|mr REM
|[[media:Process_Flow_mrEBL6000.docx‎|Process_Flow_mrEBL6000.docx‎]]
|-
|-style="background:WhiteSmoke; color:black"
|'''HSQ (XR-1541)'''
|Negative
|DOW Corning
|Approved. Standard negative resist
|[[media:DowCorningHSQA.pdf|HSQ Dow Corning]], [[media:MSDS HSQ.pdf|MSDS HSQ]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|
|TMAH, AZ400K:H2O
|H2O
|
|[[media:Process Flow HSQ.docx|process flow HSQ]]
[[/High resolution patterning with HSQ|High resolution patterning with HSQ]]
|-
|-style="background:LightGrey; color:black"
|'''AR-N 7520'''
|Negative
|[http://www.allresist.com AllResist]
|Both e-beam, DUV and UV-sensitive resist. Currently being tested, contact [mailto:pxshi@dtu.dk Peixiong Shi] for information.
|[[media:AR-N7500-7520.pdf‎|AR-N7500-7520.pdf‎]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|PGMEA
|AR 300-47, TMAH
|H2O
|
|
|-
|-style="background:WhiteSmoke; color:black"
|'''[[Specific_Process_Knowledge/Lithography/PMMA|PMMA]]'''
|Positive
| [http://www.allresist.com AllResist]
|We have various types of PMMA in the cleanroom. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|MIBK:IPA (1:3), IPA:H2O
|IPA
|acetone/1165/Pirahna
|
|-
|-style="background:LightGrey; color:black"
|'''ZEP7000'''
|Positive
|ZEON
|Not approved. Low dose to clear, can be used for trilayer (PEC-free) resist-stack. Please contact [mailto:Lithography@nanolab.dtu.dk Lithography] for information.
|[[media:ZEP7000.pdf|ZEP7000.pdf]]
|See table <u>[[Specific_Process_Knowledge/Lithography/Coaters#Coaters:_Comparison_Table|here]] </u>
|Anisole
|ZED-500/Hexyl Acetate,n-amyl acetate, oxylene.
|IPA
|acetone/1165
|Trilayer stack: [[media:Process_Flow_Trilayer_Ebeam_Resist.docx‎|Process_Flow_Trilayer_Ebeam_Resist.docx‎]]
|}
<br/>


== User resist bottles in the cleanroom ==
== User resist bottles in the cleanroom ==
Retrieved from "https://labadviser.nanolab.dtu.dk//index.php?title=Specific_Process_Knowledge/Lithography/EBeamLithography/EBLLandingpage"