Specific Process Knowledge/Etch/DRIE-Pegasus/Pegasus-4/Slow etch: Difference between revisions
| Line 49: | Line 49: | ||
|Etch of SRN | |Etch of SRN | ||
|'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | |'''~43nm/min [measured 39-50 nm/min over a 6" wafer] | ||
|''' | |'''23-25 nm/min [4" on carrier]] | ||
|- | |- | ||
|Etch rate of Si3N4 | |Etch rate of Si3N4 | ||
|'''~ | |'''~49 nm/min [4" on carrier] | ||
| | |'''24-26 nm/min [4" on carrier] | ||
|- | |- | ||
|Etch rate of SiO2 | |Etch rate of SiO2 | ||
|'''~42nm/min [41-43 nm/min over a 6" wafer] | |'''~42nm/min [41-43 nm/min over a 6" wafer] | ||
| | |'''13.7-14.7 nm/min [4" on carrier] | ||
|- | |- | ||
|Etch rate of Mir resist] | |Etch rate of Mir resist] | ||
|'''~nm/min | |'''~nm/min | ||
| | |'''~17 nm/min | ||
|- | |- | ||